Thin-film Pancharatnam lens with low f-number and high quality
نویسندگان
چکیده
منابع مشابه
Pancharatnam–Berry Phase Manipulating Metasurface for Visible Color Hologram Based on Low Loss Silver Thin Film
DOI: 10.1002/adom.201700196 construction. Alternative materials such as transition metal nitrides and complex oxide such as transparent conducting oxides[16] have been also introduced for various plasmonic applications. For alternative material platforms, the primary focus is on low loss, tunability, fabrication compatibility for integrated platforms and high temperature applications.[17] Most ...
متن کاملNext Generation High-Efficiency Low-cost Thin Film Photovoltaics
Our goal is to develop novel growth approaches for producing low cost solar cells that have efficiency comparable to those made from high-cost, single-crystalline materials. Our efforts to date focus on using ion beam assisted deposition (IBAD) to control the grain boundary alignment in polycrystalline silicon thin films. The boundaries between highly aligned grains have smaller defect densitie...
متن کاملThin Film Evolution over a Thin Porous Layer: Modeling a Tear Film on a Contact Lens
We examine a mathematical model describing the behavior of the precontact lens tear film of a human eye. Our work examines the effect of contact lens thickness and lens permeability on the film dynamics. Also investigated are gravitational effects and the effects of different slip models at the fluid-lens interface. A mathematical model for the evolution of the tear film is derived using a lubr...
متن کاملAn aberration-free lens with zero F-number
D. Schurig North Carolina State University, Department of ECE, Campus Box 7911, Raleigh, NC, 27695 Abstract: Starting from the Luneberg lens index profile, we apply the transformation design method to the problem of far-field imaging of (infinitely) distant objects. This analysis yields a single element lens with a planar image surface, zero aberrations of all orders, zero F-number and (in some...
متن کاملProcess Optimization of Deposition Conditions for Low Temperature Thin Film Insulators used in Thin Film Transistors Displays
Deposition process for thin insulator used in polysilicon gate dielectric of thin film transistors are optimized. Silane and N2O plasma are used to form SiO2 layers at temperatures below 150 ºC. The deposition conditions as well as system operating parameters such as pressure, temperature, gas flow ratios, total flow rate and plasma power are also studied and their effects are discussed. The p...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Optics Express
سال: 2015
ISSN: 1094-4087
DOI: 10.1364/oe.23.026086